TS8520VA www.vishay.com vishay semiconductors rev. 1.1, 20-feb-12 1 document number: 83473 for technical questions, contact: optochipsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 specification of high power ir emitting diode chip description TS8520VA is a high power infrared, 850 nm surface emitting diode in gaalas technology with high radiant power and high speed. polarity confoguration is n-up. features ? package type: chip ? package form: single chip ? technology: surface emitter ? dimensions chip (l x w x h in mm): 0.508 x 0.508 x 0.17 ? peak wavelength: = 850 nm ? compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec general information the datasheet is based on vi shay optoelectronics sample testing under certain pr edetermined and assumed conditions, and is provided fo r illustration purpose only. customers are encouraged to perform testing in actual proposed packaged and used conditions. vishay optoelectronics die products are tested using vishay optoelectronics based qualit y assurance procedures and are manufactured using vishay optoelectronics established processes. estimates such as those desc ribed and set forth in this datasheet for semicond uctor die will va ry depending on a number of packaging, ha ndling, use, and other factors. therefore sold die may not perf orm on an equivalent basis to standard package products. note ? test condition see table basic characteristics note ? moq: minimum order quantity product summary component f e (mw) ? (deg) p (nm) t r (ns) TS8520VA 75 55 850 15 ordering information ordering code packaging remarks package form TS8520VA-sf-f wafer sawn on foil moq: 15 000 pcs chip absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit forward current i f 250 ma reverse voltage v r 5v surge forward current t p = 100 s i fsm 1.5 a junction temperature t j 125 c storage temperature range chip t stg1 - 40 to + 125 c storage temperature range on foil t stg2 - 20 to + 65 c temperature during packaging t p < 10 s 280 c
TS8520VA www.vishay.com vishay semiconductors rev. 1.1, 20-feb-12 2 document number: 83473 for technical questions, contact: optochipsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) the measurements are based on samples of die which are mounted on a to-18 gold header without resin coating (2) the radiant intensity, i e , is measured on the geometric axis of the to-18 header basic characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - relative spectral emission e rel = f ( ) fig. 2 - radiant characteristics i rel = f( ? ) note ? all chips are checked in accordance with the vishay semicond uctor, specificat ion of visual inspection fvov6870. the visual inspection shall be made in accordance with the specifi cation of visual inspection as referenced. the visual inspe ction of chip backside is performed with stereo microscope with incident light and 40x to 80x magnification. the quality inspection (final visual inspection) is performed by production. an additional visual inspection step as special re lease procedure by qm is not installed. basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 250 ma, t p = 20 ms v f 1.8 2.0 v i f = 1.5 a, t p = 100 s v f 2.8 v radiant power (1) i f = 100 ma e 30 mw i f = 250 ma e 75 mw radiant intensity (2) i f = 100 ma i e 7.5 mw/sr reverse voltage i r = 10 a v r 10 v angle of half intensity i f = 250 ma ? 50 55 60 deg peak wavelength i f = 250 ma p 830 850 870 nm spectral bandwidth i f = 250 ma 0.5 30 nm rise time/f all time i f = 250 ma, r l = 50 t r , t f 15 ns - wavelength (nm) 21776 e, rel - relative radiant power 0 0.25 0.5 0.75 1 650 750 850 950 0.4 0.2 0 i e, rel - relative radiant sensitivity 94 8013 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 ? - angular displacement mechanical dimensions parameter symbol min. typ. max. unit length of chip edge (x-direction) l x 0.508 mm length of chip edge (y-direction) l y 0.508 mm die height h 0.17 mm diameter of bondpad d 0.107 mm additional information frontside metallization, anode gold alloy backside metallization, cathode gold alloy dicing sawing die bonding technology epoxy bonding
TS8520VA www.vishay.com vishay semiconductors rev. 1.1, 20-feb-12 3 document number: 83473 for technical questions, contact: optochipsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 handling and storage conditions ? the hermetically sealed shipment lots shall be opened in temperature and moistu re controlled cleanroom environment only. it is mandatory to follow the rules for disposition of ma terial that can be hazardous for humans and environment. ? product must be handled only at esd safe workstations. standard esd precautio ns and safe work environments are as defined in mil-hdbk-263. ? singulated die are not to be handled with tweezers. a vacuum wand with non meta llic esd protected tip should be used. packing chips are fixed on adhesive foil. upon request the foils can be mounted on plastic frame or disco frame. for shipment, the wafers are arranged to stacks and hermetically sealed in pl astic bags to ensure protection against environmental influence (humidity and contamination). use for recycling reliable operators only. we can help getting in touch with your nearest sales offi ce. by agreement we will ta ke back packing material, if it is sorted. you will have to bear the costs of transport. we will invoice you for any costs incurre d for packing material that is re turned unsorted or which we are not obliged to accept.
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